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Snapdragon 835 promises 27 percent more performance with 40 percent less power

Snapdragon 835 promises 27 percent more performance with 40 percent less power

January 4, 2017

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When Qualcomm and Samsung together announced the existence of the Snapdragon 835 in November, they were a little light on details. The chip is a derivative of the Snapdragon 820 and 821 found in phones today, built on Samsung’s new 10nm manufacturing process. At the time, the companies claimed that this would result in 27 percent more performance or 40 percent less power.

In a new announcement leaked by Evan Blass, we learn a little more about Qualcomm’s next systems-on-chips. That “or” is now an “and,” with the chip designer saying that the Samsung 10nm process has enabled a 30 percent size reduction of the 3-billion-transistor chip to use 40 percent less power and as much as 27 percent more performance.

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